Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Published in Journal of Applied Physics, 2021

Recommended citation: Hassanaly, Malik and Sitaraman, Hari and Schulte, Kevin L. and Ptak, Aaron J. and Simon, John and Udwary, Kevin and Leach, Jacob H. and Splawn, Heather (2021). " Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations." Journal of Applied Physics. 130(11), 115702. https://arxiv.org/pdf/2109.11540